High-energy Ion Implanter SOPHI-400

High-energy Ion Implanter

SOPHI-400

SOPHI-400 is a cluster type, high-energy ion implanter applicable to 2400 keV.

features

  • Cluster type
  • Thin wafers Compatible.
  • Parallel beam
  • High energy: 2400 keV
  • Wafer size: up to 200mm

applications

  • Power device manufacturing process, IGBT